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vishay siliconix dg441l, dg442l document number: 71399 s11-1066?rev. e, 30-may-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 precision monolithic quad spst low-voltage cmos analog switches features ? halogen-free according to iec 61249-2-21 definition ? 2.7 v thru 12 v single supply or 3 v thru 6 v dual supply ?o n-resistance - r ds(on) : 17 ?? ? fast switching - t on : 20 ns - t off : 12 ns ? ttl, cmos compatible ? low leakage: 0.25 na ? 2000 v esd protection ? compliant to rohs directive 2002/95/ec benefits ? widest dynamic range ? low signal errors and distortion ? break-before-make switching action ? simple interfacing applications ? precision automatic test equipment ? precision data acquisition ? communication systems ? battery powered systems ? computer peripherals ?sdsl, dslam ? audio and video signal routing description the dg441l, dg442l are low voltage pin-for-pin compatible companion devices to the industry standard dg441l, dg442l with improved performance. using bicmos wafer fabrication technology allows the dg441l, dg442l to operate on single and dual supplies. single supply voltage ranges from 3 v to 12 v while dual supply operation is recommended with 3 v to 6 v. combining high speed (t on : 20 ns), flat r ds(on) over the analog signal range (5 ? ), minimal insertion lose ( - 3 db at 280 mhz), and excellent crosstalk and off-isolation performance ( - 50 db at 50 mhz), the dg441l, dg442l are ideally suited for audio and video signal switching. the dg441l, dg442l responds to opposite control logic as shown in the truth table open and two normally closed switches. functional block diagram and pin configuration logic "0" ? 0.8 v logic "1" ?? 2.4 v dg441l/442l dual-in-line, tssop and soic in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd nc s 4 s 3 d 4 d 3 in 4 in 3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 top view 9 truth table logic dg441l dg442l 0onoff 1offon ordering information temp. range package part number - 40 c to 85 c 16-pin tssop dg441ldq-t1-e3 dg442ldq-t1-e3 16-pin narrow soic dg441ldy-t1-e3 dg442ldy-t1-e3 - 55 c to 125 c 16-pin cerdip dg441lak, dg441lak/883 dg442lak, dg442lak/883 lcc-20 dg441laz/883 dg442laz/883
www.vishay.com 2 document number: 71399 s11-1066?rev. e, 30-may-11 vishay siliconix dg441l, dg442l this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. signals on s x , d x , or in x exceeding v+ or v- will be clamped by internal diodes . limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 7 mw/c above 75 c d. derate 7.6 mw/c above 75 c e. derate 12 mw/c above 75 c. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit v + to v - - 0.3 to 13 v gnd to v - a 7 digital inputs a v s , v d gnd - 0.3 to (v +) + 0.3 or 30 ma, whichever occurs first continuous current (any terminal) 30 ma current, s or d (pulsed 1 ms, 10 % duty cycle) 100 storage temperature (dq, dy suffix) - 65 to 125 c (ak suffix) - 65 to 150 power dissipation (packages) b 16-pin tssop c 450 mw 16-pin narrow body soic d 650 16-pin cerdip e 900 specifications a (single supply 12 v) test conditions unless otherwise specified v + = 12 v, v - = 0 v v in = 2.4 v, 0.8 v f a suffix limits - 55 c to 125 c d suffix limits - 40 c to 85 c unit parameter symbol temp. b typ. c min. d max. d min. d max. d analog switch analog signal range e v analog full 0 12 0 12 v drain-source on-resistance r ds(on) v + = 10.8 v, v - = 0 v i s = 10 ma, v d = 2/9 v room full 20 30 45 30 40 ? on-resistance match between channels e ? r ds(on) i s = 10 ma, v d = 9 v room 0.1 0.5 0.5 switch off leakage current i s(off) v d = 1/11 v, v s = 11/1 v room full - 1 - 15 1 15 - 1 - 10 1 10 na i d(off) room full - 1 - 15 1 15 - 1 - 10 1 10 channel on leakage current i d(on) v s = v d = 11/1 v room full - 1 - 15 1 15 - 1 - 10 1 10 digital control input current, v in low i il v in under test = 0.8 v full 0.01 - 1.5 1.5 - 1 1 a input current, v in high i ih v in under test = 2.4 v full - 1.5 1.5 - 1 1 dynamic characteristics tu r n - o n t i m e t on r l = 300 ? , c l = 35 pf v s = 5 v, see figure 2 room full 20 60 80 60 70 ns turn-off time t off room full 12 35 50 35 45 charge injection e q v g = 0 v, r g = 0 ? , c l = 10 nf room 5 pc off isolation e oirr r l = 50 ? , c l = 5 pf , f = 1 mhz room 71 db channel-to-channel crosstalk e x ta l k room 95 source off capacitance e c s(off) f = 1 mhz room 5 pf drain off capacitance e c d(off) room 6 channel on capacitance e c d(on) room 15 power supplies positive supply current i+ v in = 0 v or 12 v full 0.03 1.5 1 a negative supply current i- room full - 0.002 - 1 - 7.5 - 1 - 5 ground current i gnd full - 0.002 - 1.5 - 1
document number: 71399 s11-1066?rev. e, 30-may-11 www.vishay.com 3 vishay siliconix dg441l, dg442l this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications a (dual supply 5 v) test conditions unless otherwise specified v + = 5 v, v - = - 5 v v in = 2.4 v, 0.8 v f a suffix limits - 55 c to 125 c d suffix limits - 40 c to 85 c unit parameter symbol temp. b typ. c min. d max. d min. d max. d analog switch analog signal range e v analog full - 55- 55v drain-source on-resistance r ds(on) v + = 5 v, v - = - 5 v i s = 10 ma, v d = 3.5 v room full 20 33 45 33 40 ? on-resistance match between channels e ? r ds(on) i s = 10 ma, v d = 3.5 v room 0.1 0.5 0.5 switch off leakage current g i s(off) v + = 5.5 , v - = - 5.5 v v d = 4.5 v, v s = 4.5 v room full - 1 - 15 1 15 - 1 - 10 1 10 na i d(off) room full - 1 - 15 1 15 - 1 - 10 1 10 channel on leakage current g i d(on) v + = 5.5 v, v - = - 5.5 v v s = v d = 4.5 v room full - 1 - 15 1 15 - 1 - 10 1 10 digital control input current, v in low e i il v in under test = 0.8 v full 0.05 - 1.5 1.5 - 1 1 a input current, v in high e i ih v in under test = 2.4 v full 0.05 - 1.5 1.5 - 1 1 dynamic characteristics tu r n - o n t i m e t on r l = 300 ? , c l = 35 pf v s = 3.5 v, see figure 2 room full 21 60 83 60 70 ns turn-off time t off room full 16 35 55 35 45 charge injection e q v g = 0 v, r g = 0 ? , c l = 10 nf room 5 pc off isolation e oirr r l = 50 ? , c l = 5 pf , f = 1 mhz room 68 db channel-to-channel crosstalk e x ta l k room 85 source off capacitance e c s(off) f = 1 mhz room 9 pf drain off capacitance e c d(off) room 9 channel on capacitance e c d(on) room 20 power supplies positive supply current e i+ v in = 0 v or 5 v full 0.002 1.5 1 a negative supply current e - room full - 0.002 - 1 - 7.5 - 1 - 5 ground current e i gnd full - 0.002 - 1.5 - 1
www.vishay.com 4 document number: 71399 s11-1066?rev. e, 30-may-11 vishay siliconix dg441l, dg442l this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications a (single supply 5 v) test conditions unless otherwise specified v + = 5 v, v - = 0 v v in = 2.4 v, 0.8 v f a suffix limits - 55 c to 125 c d suffix limits - 40 c to 85 c unit parameter symbol temp. b typ. c min. d max. d min. d max. d analog switch analog signal range e v analog full 5 5 v drain-source on-resistance e r ds(on) v + = 4.5 v i s = 5 ma, v d = 1 v, 3.5 v room full 35 50 88 50 75 ? on-resistance match between channels e ? r ds(on) i s = 10 ma, v d = 3.5 v room 0.5 1 1 dynamic characteristics tu r n - o n t i m e e t on r l = 300 ? , c l = 35 pf v s = 3.5 v, see figure 2 room hot 27 50 90 50 60 ns turn-off time e t off room hot 15 30 55 30 40 charge injection e q v g = 0 v, r g = 0 ? , c l = 10 nf room 0.5 pc power supplies positive supply current e i + v in = 0 v or 5 v full 10 200 100 a negative supply current e i - room full - 0.002 - 1 - 7.5 - 1 - 5 ground current e i gnd full - 10 - 200 - 100
document number: 71399 s11-1066?rev. e, 30-may-11 www.vishay.com 5 vishay siliconix dg441l, dg442l this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. refer to process option flowchart. b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this datas heet. e. guaranteed by design, no t subject to production test. f. v in = input voltage to perform proper function. g. leakage parameters are guaranteed by worst case test conditions and not subject to test. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications a (single supply 3 v) test conditions unless otherwise specified v + = 3 v, v - = 0 v v in = 0.4 v f a suffix limits - 55 c to 125 c d suffix limits - 40 c to 85 c unit parameter symbol temp. b typ. c min. d max. d min. d max. d analog switch analog signal range e v analog full 0303v drain-source on-resistance r ds(on) v + = 2.7 v, v - = 0 v i s = 5 ma, v d = 0.5, 2.2 v room full 65 80 115 80 100 ? on-resistance match between channels e ? r ds(on) i s = 5 ma, v d = 2.2 v room 1 3 3 switch off leakage current g i s(off) v + = 3.3 , v - = 0 v v d = 1, 2 v, v s = 2, 1 v room full - 1 - 15 1 15 - 1 - 10 1 10 na i d(off) room full - 1 - 15 1 15 - 1 - 10 1 10 channel on leakage current g i d(on) v + = 3.3 v, v - = 0 v v s = v d = 1, 2 v room full - 1 - 15 1 15 - 1 - 10 1 10 digital control input current, v in low e i il v in under test = 0.4 v full 0.005 - 1.5 1.5 - 1 1 a input current, v in high e i ih v in under test = 2.4 v full 0.005 - 1.5 1.5 - 1 1 dynamic characteristics tu r n - o n t i m e t on r l = 300 ? , c l = 35 pf v s = 1.5 v, see figure 2 room full 50 136 175 136 151 ns turn-off time t off room full 30 100 140 100 125 charge injection e q v g = 0 v, r g = 0 ? , c l = 10 nf room 1 pc off isolation e oirr r l = 50 ? , c l = 5 pf , f = 1 mhz room 68 db channel-to-channel crosstalk e x ta l k room 85 source off capacitance e c s(off) f = 1 mhz room 6 pf drain off capacitance e c d(off) room 6 channel on capacitance e c d(on) room 20
www.vishay.com 6 document number: 71399 s11-1066?rev. e, 30-may-11 vishay siliconix dg441l, dg442l this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) r ds(on) vs. drain voltage (single supply) r ds(on) vs. drain voltage and temperature (dual supply) switching time vs. single supply 0 20 40 60 80 100 036912 v cc = 2.7 v drain voltage (v) ? on-resistance ( ? ) r ds(on) v cc = 4.5 v v cc = 12 v ? on-resistance ( ? ) r ds(on) drain voltage (v) 0 7 14 21 28 35 - 5- 3- 1 1 3 5 a b c d v = 5 v a = 125 c b = 85 c c = 25 c d = - 40 c e = - 55 c e 0 10 20 30 40 50 036912 v positive supply voltage (v) switching speed (ns) t on t off 15 r ds(on) vs. drain voltage and temperature (single supply) leakage current vs. analog voltage (dual supply) switching time vs. dual supply drain voltage (v) ? on-resistance ( ? ) r ds(on) b a d 0 10 20 30 40 50 012345 c e a =125 c b = 85 c c = 25 c d = - 40 c e = - 55 c v+ = 5 v v - = 0 v - 30 - 20 - 10 0 10 20 30 - 5 - 3 - 1 1 3 5 v d or v s ? drain-source voltage leakage current (pa) i , i sd v+ = 5 v v- = - 5 v i d(on) i d(off) i s(off) 0 9 18 27 36 45 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 switching speed (ns) t on t off v positive supply voltage (v)
document number: 71399 s11-1066?rev. e, 30-may-11 www.vishay.com 7 vishay siliconix dg441l, dg442l this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) charge injection vs. drain voltage - 2 0 2 4 6 - 5 - 3 - 1 1 3 5 drain voltage (v) v supply = 5 v charge injection (q) v supply = 3 v input threshold vs. single supply voltage capacitance vs. analog signal (dual supply) 0.0 0.3 0.6 0.9 1.2 1.5 1.8 024681012 v positive supply voltage (v) ? threshold (v) th v 14 0 5 10 15 20 25 - 5- 3- 1 1 3 5 analog voltage (v) capacitance (pf) v supply = 5 v c d(on) c s /c d(off) drain capacitance vs. drain voltage (single supply) insertion loss, off is olation and crosstalk vs. frequency (single supply) 0 1 2 3 4 5 6 7 036912 v d ? drain voltage (v) capacitance (pf) c d(off) at v cc = 5 v c d(off) at v cc = 3 v c d(off) at v cc = 12 v 0.1 - 110 1 - 30 10 - 70 - 50 100 1000 frequency (mhz) - 90 loss (db) v+ = 3 v v - = 0 v r l = 50 ? off isolation crosstalk insertion loss - 3 db = 280 mhz 10 - 10
www.vishay.com 8 document number: 71399 s11-1066?rev. e, 30-may-11 vishay siliconix dg441l, dg442l this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schematic diagram (typical channel) test circuits figure 1. in x 5 v reg level shift/ drive v+ gnd v- s d v- v+ figure 2. switching time 0 v logic input switch input switch output 3 v 50 % 0 v v o v s t r < 20 ns t f < 20 ns t off t on note: logic input waveform is inverted for dg442. 50 % 80 % 80 % v s c l (includes fixture and stray capacitance) v- v+ in s d 3 v r l 1 k ? c l 35 pf v o v- gnd v+ figure 3. charge injection off on off off on off v o ? v o in x in x q = ? v o x c l (dg441) (dg442) c l 1 nf in d v o v- v+ s 3 v r g v- gnd v+
document number: 71399 s11-1066?rev. e, 30-may-11 www.vishay.com 9 vishay siliconix dg441l, dg442l this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 4. crosstalk c = 1 f tantalum in parallel with 0.01 f ceramic ? 50 ? d 1 v o r g = 50 ? s 1 v+ v- d 2 gnd v+ v- nc c c s 2 r l in 1 x ta l k isolation = 20 log v s v o 0 v, 2.4 v 0 v, 2.4 v v s in 2 c = rf bypass figure 5. off isolation s in r l d r g = 50 ? v s v o 0 v, 2.4 v off isolation = 20 log v s v o v+ v- gnd v - c c v+ figure 6. source/drain capacitances s d in v+ v- gnd v+ v- c c 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent
www.vishay.com 10 document number: 71399 s11-1066?rev. e, 30-may-11 vishay siliconix dg441l, dg442l this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 applications vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see www.vishay.com/ppg?71399 . figure 7. power mosfet driver + 12 v + 12 v gnd v - v+ 0 = load off 1 = load on + 24 v i = 3a vn0300l, m dg442l + 12 v 10 k ? 150 ? r l in figure 8. open loop sample-and-hold h = sample l = hold 0 v + 12 v v in v out c h sd in 1/4 dg442l + - + - figure 9. precision-weighted resistor programmable-gain amplifier + 12 v v v+ v - gnd dg441l or dg442l + - v in v out gain error is determined only by the resistor tolerance. op amp offset and cmrr will limit ac- curacy of circuit. gain 1 a v = 1 gain 2 a v = 10 gain 3 a v = 20 gain 4 a v = 100 r 1 90 k ? r 2 5 k ? r 3 4 k ? r 4 1 k ? v out v in = r 1 + r 2 + r 3 + r 4 r 4 = 100 with sw 4 closed
all leads 0.101 mm 0.004 in e h c d e b a1 l 4 3 12 8 7 56 13 14 16 15 9 10 12 11 package information vishay siliconix document number: 71194 02-jul-01 www.vishay.com 1
jedec part number: ms-012 dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 9.80 10.00 0.385 0.393 e 3.80 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037 0 8 0 8 ecn: s-03946?rev. f, 09-jul-01 dwg: 5300
vishay siliconix package information document number: 74417 23-oct-06 www.vishay.com 1 symbols dimensions in millimeters min nom max a - 1.10 1.20 a1 0.05 0.10 0.15 a2 - 1.00 1.05 b 0.22 0.28 0.38 c - 0.127 - d 4.90 5.00 5.10 e 6.10 6.40 6.70 e1 4.30 4.40 4.50 e-0.65- l 0.50 0.60 0.70 l1 0.90 1.00 1.10 y--0.10 1036 ecn: s-61920-rev. d, 23-oct-06 dwg: 5624 tssop: 16-lead
application note 826 vishay siliconix www.vishay.com document number: 72608 24 revision: 21-jan-08 application note recommended minimum pads for so-16 recommended minimum pads for so-16 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) return to index return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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